Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Autor: Alexey Fedorov, Sergio Bietti, Stefano Sanguinetti, Claudio Somaschini, Nobuyuki Koguchi
Přispěvatelé: Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S
Jazyk: angličtina
Rok vydání: 2010
Předmět:
congenital
hereditary
and neonatal diseases and abnormalities
Materials science
Photoluminescence
Fabrication
Nanostructure
Nanochemistry
Nanotechnology
GaAs nanostructures
Substrate (electronics)
Epitaxy
dropet epitaxy
III-V semiconductors
Condensed Matter::Materials Science
Materials Science(all)
lcsh:TA401-492
General Materials Science
Spectroscopy
Chemistry/Food Science
general
FIS/03 - FISICA DELLA MATERIA
Material Science
business.industry
Condensed Matter::Other
Engineering
General
technology
industry
and agriculture
Special Issue Article
Materials Science
general
nutritional and metabolic diseases
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
eye diseases
quantum nanostructure
Physics
General
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
Optoelectronics
Molecular Medicine
lcsh:Materials of engineering and construction. Mechanics of materials
business
Droplet epitaxy
Molecular beam epitaxy
Zdroj: Nanoscale Research Letters, Vol 5, Iss 12, Pp 1897-1900 (2010)
Nanoscale Research Letters
ISSN: 1931-7573
Popis: We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.
Databáze: OpenAIRE
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