On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications
| Autor: | Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Pouyan Keshavarzian, Shyue Seng Tan, Michelle Tng, Louis Lim, Vinit Dhulla, Elgin Quek, Myung-Jae Lee, Edoardo Charbon |
|---|---|
| Rok vydání: | 2022 |
| Předmět: |
large-area
co-axial scanning FOS: Physical sciences single-photon avalanche diode Physics - Applied Physics Applied Physics (physics.app-ph) to-digital converter spad Atomic and Molecular Physics and Optics time-correlated single-photon counting tcspc cmos sipm Electrical and Electronic Engineering silicon photomultiplier lidar bcd Physics - Optics Optics (physics.optics) |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2022.3161089 |
| Popis: | We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell is passively quenched by a monolithically integrated 3.3 V thick oxide transistor. The measured gain is 3.4$\times$ 10$^5$ at 5 V excess bias voltage. The single-photon timing resolution (SPTR) is 185 ps and the multiple-photon timing resolution (MPTR) is 120 ps at 3.3 V excess bias voltage. We integrate the SiPM into a co-axial light detection and ranging (LiDAR) system with a time-correlated single-photon counting (TCSPC) module in FPGA. The depth measurement up to 25 m achieves an accuracy of 2 cm and precision of 2 mm under the room ambient light condition. With co-axial scanning, the intensity and depth images of complex scenes with resolutions of 128$\times$256 and 256$\times$512 are demonstrated. The presented SiPM enables the development of cost-effective LiDAR system-on-chip (SoC) in the advanced technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|