High-Temperature Stability of Silicon Carbide Nanowires
| Autor: | Hanchen Huang, Jaron Kuppers, Hyun Woo Shim |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
business.product_category
Materials science Annealing (metallurgy) Transition temperature Biomedical Engineering Nanowire Oxide Bioengineering General Chemistry Condensed Matter Physics chemistry.chemical_compound Chemical engineering chemistry Microfiber Silicon carbide General Materials Science Thermal stability business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 8:3999-4002 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2008.18347 |
| Popis: | The paper reports morphology and structure transitions of silicon carbide (SiC) nanowires during high temperature annealing; the as-prepared nanowires are in the form of SiC core and SiO2 shell. The transition temperature is about 1200 °C, 600 °C lower than that of SiC microfibers, and it starts with the formation of junctions of individual nanowires. The junctions grow into webs while the crystalline SiC cores of the nanowires oxidize. The growth and the oxidation eventually lead to the formation of an oxide film, when the transition completes. The thermal stability and the transition mechanisms of SiC nanowires are critical to their applications in high temperature environments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|