| Autor: |
Gengxin Chen, Kaixuan Chen, Junwei Zhang, Ranfeng Gan, Lu Qi, Xuancong Fan, Ziliang Ruan, Zhenrui Lin, Jie Liu, Chao Lu, Alan Pak Tao Lau, Daoxin Dai, Changjian Guo, Liu Liu |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Optics express. 30(14) |
| ISSN: |
1094-4087 |
| Popis: |
Electro-optic (EO) modulators with a high modulation bandwidth are indispensable parts of an optical interconnect system. A key requirement for an energy-efficient EO modulator is the low drive voltage, which can be provided using a standard complementary metal oxide semiconductor circuity without an amplifying driver. Thin-film lithium niobate has emerged as a new promising platform, and shown its capable of achieving driverless and high-speed EO modulators. In this paper, we report a compact high-performance modulator based on the thin-film lithium niobate platform on a silicon substrate. The periodic capacitively loaded travelling-wave electrode is employed to achieve a large modulation bandwidth and a low drive voltage, which can support a driverless single-lane 100Gbaud operation. The folded modulation section design also helps to reduce the device length by almost two thirds. The fabricated device represents a large EO bandwidth of 45GHz with a half-wave voltage of 0.7V. The driverless transmission of a 100Gbaud 4-level pulse amplitude modulation signal is demonstrated with a power consumption of 4.49fj/bit and a bit-error rate below the KP4 forward-error correction threshold of 2.4×10−4. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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