Great Enhancement Effect of 20–40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector
Autor: | Shun Han, Deliang Zhu, Wangying Xu, Youming Lu, Sirong Hu, Hao Xia, Wenjun Liu, Dao Hua Zhang, Peijiang Cao, Ming Fang |
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Přispěvatelé: | School of Electrical and Electronic Engineering, LUMINOUS! Centre of Excellence for Semiconductor Lighting & Displays |
Rok vydání: | 2021 |
Předmět: |
Materials science
Uv detector business.industry Fast speed Electromagnetic Radiation General Chemical Engineering Detector Metal Nanoparticles General Chemistry Article Chemistry Simple (abstract algebra) Electrical and electronic engineering [Engineering] Optoelectronics Mixed phase business QD1-999 |
Zdroj: | ACS Omega, Vol 6, Iss 10, Pp 6699-6707 (2021) ACS Omega |
ISSN: | 2470-1343 |
DOI: | 10.1021/acsomega.0c05555 |
Popis: | High-performance solar-blind UV detector with high response and fast speed is needed in multiple types of areas, which is hard to achieve in one device with a simple structure and device fabrication process. Here, the effects of Ag nanoparticles (NPs) with different sizes on UV response characteristics of the device are studied, the Ag NPs with different sizes that are made from a simple vacuum anneal method. Ag NPs with different sizes could modulate the peak response position of the mixed-phase MgZnO detector from near UV range (350 nm) to deep UV range (235 nm), and the enhancement effect of the Ag NPs on the UV response differs much with the crystal structure and the basic UV response of the MgZnO thin film. When high density 20-40 nm Ag NPs is induced, the deep UV (235 nm) response of the mixed-phase MgZnO detector is increased by 226 times, the I uv/I dark ratio of the modified device is increased by 17.5 times. The slight enhancement in UV light intensity from 20 to 40 nm Ag NPs induces multiple tunnel breakdown phenomena within the mixed-phase MgZnO thin film, which is the main reason for the abnormal great enhancement effect on deep UV response of the device, so the recovery speed of the modified device is not influenced. Therefore, Ag NPs with different sizes could effectively modulate the UV response peak position of mixed-phase MgZnO thin films, and the introduction of Ag NPs with high density and small size is a simple way to greatly increase the sensitivity of the mixed-phase MgZnO detector at deep UV light without decreasing the device speed. Published version This work was supported by the National Natural Science Foundation of China under grant nos. (51872187, 11774241, 51371120, 51302174, 61704111, 61504083, and 61574051), the Natural Science Foundation of Guangdong Province (2016A030313060 and 2017A030310524), the Public Welfare Capacity Building in Guangdong Province (2015A010103016), the Project of Department of Education of Guangdong Province (2014KTSCX110), the Science and Technology Research Items of Shenzhen (JCYJ20170818144255777, JCYJ20170818144212483, JCYJ20180507182248925, JCYJ201602261920, JCYJ20170818143417082, and JCYJ20160226192033020), the Science and Technology Foundation of Shenzhen, and the National Key Research and Development Program of China (2017YFB0404100 and 2017YFB0403000). |
Databáze: | OpenAIRE |
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