Passivating contacts for crystalline silicon solar cells
Autor: | Bas W. H. van de Loo, Sjoerd Smit, Lachlan E. Black, Jimmy Melskens, Wilhelmus M. M. Kessels, Bart Macco |
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Přispěvatelé: | Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials |
Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Charge carrier lifetime
Materials science contacts Passivation Silicon photovoltaic (PV) cells chemistry.chemical_element 02 engineering and technology crystalline silicon (c-Si) 01 natural sciences 0103 physical sciences Spontaneous emission Crystalline silicon passivation SDG 7 - Affordable and Clean Energy Electrical and Electronic Engineering 010302 applied physics Energy conversion efficiency Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Engineering physics Electronic Optical and Magnetic Materials Important research chemistry Charge carrier 0210 nano-technology SDG 7 – Betaalbare en schone energie |
Zdroj: | IEEE Journal of Photovoltaics, 8(2), 373-388. IEEE Electron Devices Society |
ISSN: | 2156-3381 |
Popis: | To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects. |
Databáze: | OpenAIRE |
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