Passivating contacts for crystalline silicon solar cells

Autor: Bas W. H. van de Loo, Sjoerd Smit, Lachlan E. Black, Jimmy Melskens, Wilhelmus M. M. Kessels, Bart Macco
Přispěvatelé: Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: IEEE Journal of Photovoltaics, 8(2), 373-388. IEEE Electron Devices Society
ISSN: 2156-3381
Popis: To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
Databáze: OpenAIRE