Advancing the ion beam thin film planarization process for the smoothing of substrate particles
| Autor: | Ted Liang, Paul B. Mirkarimi, D. G. Stearns, Farhad Salmassi, Eberhard Spiller, Jeff C. Robinson, Alan R. Stivers, James Alexander Liddle, Sherry L. Baker |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Ion beam business.industry Extreme ultraviolet lithography Substrate (printing) engineering.material Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Coating law Chemical-mechanical planarization engineering Electrical and Electronic Engineering Photolithography Thin film business Electron-beam lithography |
| Zdroj: | Mirkarimi, P.; Spiller, E.; Baker, S.; Robinson, J.; Stearns, D.; Liddle, J.A.; et al.(2004). Advancing the ion beam thin film planarization process for the smoothing of substrate particles. Microelectronic Engineering, 77(3/4/2008). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/7sq7q296 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2004.12.098 |
| Popis: | For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization Process, a coating process designed to planarize substrate asperities, can be extended to smooth ~70 and ~80nm diameter particles on EUVL reticle substrates to a height of ~0.5nm, which will render them noncritical in an EUVL printing process. We demonstrate this smoothing process using controlled nanoscale substrate particles and lines fabricated with an e-beam lithography process. The above smoothing process was also modified to yield an excellent reflectance/wavelength uniformity and a good EUV reflectivity for the multilayer, which is required for EUVL reticles. XTEM on a smoothed substrate line defect shows excellent agreement with results obtained from our multilayer growth model. |
| Databáze: | OpenAIRE |
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