The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter
| Autor: | Nebi Caka, Milaim Zabeli, Qamil Kabashi, Myzafere Limani |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Transconductance Mühendislik Hardware_PERFORMANCEANDRELIABILITY noise margins Engineering Hardware_GENERAL MOSFET Hardware_INTEGRATEDCIRCUITS transconductance parameter lcsh:Science (General) threshold voltage General Environmental Science business.industry Electrical engineering CMOS inverter threshold voltage voltage critical value noise margins transconductance parameter Threshold voltage lcsh:TA1-2040 voltage critical value General Earth and Planetary Sciences Inverter lcsh:Engineering (General). Civil engineering (General) business CMOS inverter lcsh:Q1-390 Hardware_LOGICDESIGN |
| Zdroj: | Volume: 2, Issue: 3 135-148 Natural and Engineering Sciences Natural and Engineering Sciences, Vol 2, Iss 3, Pp 135-148 (2017) |
| ISSN: | 2458-8989 |
| Popis: | The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements. |
| Databáze: | OpenAIRE |
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