Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz
| Autor: | M. Zink, R. Loesch, Ingmar Kallfass, Matthias Seelmann-Eggebert, Michael Schlechtweg, Arnulf Leuther, Volker Hurm, Hermann Massler, M. Riessle, Oliver Ambacher, Axel Tessmann, M. Kuri |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2011 |
| Předmět: |
waveguide-to-microstrip transition
Materials science business.industry mHEMTS Frequency multiplier Amplifier frequency multiplier Transistor Electrical engineering grounded coplanar waveguide H band Integrated circuit High-electron-mobility transistor submillimeter-wave monolithic integrated circuit cascode transistor law.invention waveguide packaging amplifier circuits law Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit H-band Electronic circuit |
| Zdroj: | IEEE Journal of Solid-State Circuits. 46:2193-2202 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2011.2163212 |
| Popis: | In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50-μm-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions. |
| Databáze: | OpenAIRE |
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