Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches
| Autor: | Yann Beilliard, Serge Ecoffey, Abdelkader Souifi, Marina Labalette, Serge Blonkowski, Dominique Drouin, S. Jeannot |
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| Přispěvatelé: | INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), ST Microélectronic, STMicroelectronics [Crolles] (ST-CROLLES), STI-IMM-LEG, Ecole Polytechnique Fédérale de Lausanne (EPFL) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Resistive touchscreen [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] Materials science Fabrication Condensed matter physics Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Hafnium compounds 01 natural sciences Computer Science Applications [SPI.MAT]Engineering Sciences [physics]/Materials Back end of line Planar 0103 physical sciences [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Electrical performance Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology |
| Zdroj: | IEEE Transactions on Nanotechnology IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2017, 16 (5), pp.745-751. ⟨10.1109/TNANO.2017.2698205⟩ |
| ISSN: | 1536-125X |
| DOI: | 10.1109/TNANO.2017.2698205⟩ |
| Popis: | This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent with resistive random access memories fabricated and characterized with the same procedure that showed ${R_{{\rm{OFF}}}}/{R_{{\rm{ON}}}}$ ratios of 100. Complementary operating voltages of ${V_{{\rm{th}}{\text{1,3}}}} = | \text{0.8} |\;{\text{V}}$ and ${V_{{\rm{th}}{\text{2.4}}}} = | \text{1.1} |\;{\text{V}}$ are obtained for 88 × 22 nm2 junction with a 6 nm thick HfO $_x$ junction. |
| Databáze: | OpenAIRE |
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