Ag2S QDs/Si Heterostructure-Based Ultrasensitive SWIR Range Detector
Autor: | Mikhail S. Smirnov, Oleg V. Ovchinnikov, Ivan Tretyakov, Gregory Goltsman, Sergey Svyatodukh, S. Ryabchun, Aleksey Perepelitsa, N. S. Kaurova, Alexander Shurakov |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Materials science
Silicon General Chemical Engineering short-wave infrared range Photodetector chemistry.chemical_element quantum dots 02 engineering and technology Photovoltaic effect 010402 general chemistry 01 natural sciences lcsh:Chemistry Microelectronics General Materials Science Surface states detector business.industry silicon Heterojunction 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry lcsh:QD1-999 Quantum dot Optoelectronics Nanometre 0210 nano-technology business |
Zdroj: | Nanomaterials, Vol 10, Iss 861, p 861 (2020) Nanomaterials Volume 10 Issue 5 |
ISSN: | 2079-4991 |
Popis: | In the 20th century, microelectronics was revolutionized by silicon&mdash its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 × 10&minus 10 W/&radic Hz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
Databáze: | OpenAIRE |
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