Band gap tuning of Cu2ZnGeSxSe4-x absorbers for thin-film solar cells
| Autor: | Erik Ahlswede, Mahmoud Seboui, Thomas Schnabel |
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| Rok vydání: | 2017 |
| Předmět: |
kesterite
Control and Optimization Materials science Annealing (metallurgy) Band gap Energy Engineering and Power Technology 02 engineering and technology Multijunction photovoltaic cell engineering.material 010402 general chemistry 01 natural sciences 7. Clean energy lcsh:Technology Crystallinity band gap kesterite czgs band gap Kesterite Electrical and Electronic Engineering Engineering (miscellaneous) CZGS Renewable Energy Sustainability and the Environment business.industry lcsh:T 021001 nanoscience & nanotechnology 0104 chemical sciences Multiple exciton generation thin-film solar cells engineering Optoelectronics Thin film solar cell 0210 nano-technology business Energy (miscellaneous) Voltage |
| Zdroj: | Energies; Volume 10; Issue 11; Pages: 1813 Energies, Vol 10, Iss 11, p 1813 (2017) |
| Popis: | In this work, kesterite-type Cu2ZnGeSxSe4-x absorbers were prepared by a two-step process for use in thin-film solar cells. Their high band gap makes them an interesting candidate as top cells in multijunction solar cells. However, an exact tuning of the band gap is essential. Therefore, for the first time, the [S]/([S] + [Se]) ratio was controlled via addition of a variable amount of GeS during the annealing step, which allowed precise control of the band gap between 1.5 and 1.7 eV. The changes in morphology and crystallinity of the absorber are discussed in detail. An additional focus was directed toward the parameters of the resulting solar cells. Although the efficiency declined as the [S]/([S] + [Se]) ratio increases, the open-circuit voltage was considerably increased. |
| Databáze: | OpenAIRE |
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