Effects of thermal annealing on oxygen related centers in GaAs

Autor:	R. E. Kremer, Marek Skowronski
Rok vydání:	1991
Předmět:	Absorption spectroscopy Chemistry Annealing (metallurgy) Inorganic chemistry Analytical chemistry Solid oxygen General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element Thermal treatment Activation energy Dissolution Oxygen
Zdroj:	ResearcherID
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.347513
Popis:	Infrared absorption measurements in the 600–1300 cm−1 range of oxygen doped bulk GaAs crystals are presented. Nine different absorption bands have been observed and the effect of thermal treatment on their intensity investigated. Short term annealing (5 min) followed by quenching resulted in either partial or complete disappearance of absorption lines located at 604.8, 730.8, 794.3, 1084.2, 1092.0, and 1114.3 cm−1 and have been interpreted as being due to the dissolution of the complexes involving oxygen atoms. In parallel to this dissolution, there was a corresponding increase of concentration of isolated interstitial oxygen released from those complexes. In particular, it has been determined that the oxygen related center responsible for the 730.8 cm−1 triplet dissociates with an activation energy of 3.8 eV. The results of long term annealing (14 h) are consistent with the above interpretation. The concentration of simple defects, interstitial oxygen, and Ga‐O‐Ga(1) center, is decreasing in the temperat...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf385265d83bcdd67fea397956c277f https://doi.org/10.1063/1.347513 Zobrazit plný text záznamu