28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K
| Autor: | Michel Haond, Valeriya Kilchytska, Jean-Pierre Raskin, Babak Kazemi Esfeh, Denis Flandre, Nicolas Planes |
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| Přispěvatelé: | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
UTBB MOSFETs
02 engineering and technology Cryogenics 01 natural sciences RF figures of merit (FoM) Parasitic elements 0103 physical sciences MOSFET Figure of merit Parasitic extraction Electrical and Electronic Engineering RF Figures of Merit (FoM) 010302 applied physics Physics Oscillation business.industry cryogenic temperature Cryogenic temperature parasitic elements 021001 nanoscience & nanotechnology Cutoff frequency FDSOI Electronic Optical and Magnetic Materials Equivalent circuit Optoelectronics Radio frequency lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 810-816 (2019) I E E E Journal of the Electron Devices Society, Vol. 7, p. 810816 (2019) |
| ISSN: | 2168-6734 |
| Popis: | This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency ( $f_{T}$ ) and maximum oscillation frequency ( $f_{\max }$ ), as well as elements of small-signal equivalent circuit are extracted from the measured S-parameters. Increases of $f_{\textit T}$ and $f_{\max }$ by about 85 GHz and about 30 GHz, respectively, are demonstrated at 77 K. The observed behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This paper suggests 28-nm FDSOI as a good candidate for future cryogenic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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