Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates
| Autor: | W. A. Schoonveld, T. M. Klapwijk, I.P.M. Bouchoms, J. Vrijmoeth |
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| Přispěvatelé: | Faculty of Science and Engineering, Fysische Technologie |
| Jazyk: | Dutch; Flemish |
| Rok vydání: | 1999 |
| Předmět: |
Materials science
atomic force microscopy Mechanical Engineering Metals and Alloys Analytical chemistry Condensed Matter Physics sublimation Electronic Optical and Magnetic Materials Vacuum evaporation evaporation X-ray diffraction Pentacene chemistry.chemical_compound Crystallography chemistry Mechanics of Materials Perfluoropentacene Thin-film transistor Materials Chemistry Lamellar structure Sublimation (phase transition) polycrystalline thin films Thin film Single crystal |
| Zdroj: | Synthetic Metals, 104(3), 175-178. Elsevier Science |
| ISSN: | 0379-6779 |
| Popis: | We identify, using Atomic Force Microscopy and θ –2 θ X-ray Diffraction techniques, the morphology of the two crystallographic phases commonly observed in vacuum evaporated pentacene thin films on SiO 2 substrates used for thin film transistor applications. One phase, a substrate induced thin film phase, forms directly onto the SiO 2 substrate and constitutes a layer consisting of strongly faceted grains with a step height between terraces of 15.5 A. Above a critical thickness of this thin film phase, lamellar structures are found with increasing fraction when the film thickness is increased. These structures are identified as the second phase with a vertical periodicity of 14.5 A corresponding to the pentacene triclinic bulk phase. Furthermore, we find maximum sized single crystal domains (∼15 μm in diameter), consisting of several micrometer sized uniformly oriented grains of the thin film phase, at a substrate temperature of 80°C and a deposition rate of 0.08 nm/s. |
| Databáze: | OpenAIRE |
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