High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
| Autor: | Jianjun Gao, Chongyang Liu, Xin Guo, Hong Wang, C. M. Manoj Kumar, Kian Siong Ang, Yang Tian, Bo Gao, Qian Qian Meng |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Temasek Laboratories |
| Rok vydání: | 2014 |
| Předmět: |
Photocurrent
Fabrication Materials science business.industry Bandwidth (signal processing) Doping Blocking effect Dipole-doped layer high speed photocurrent uni-traveling-carrier photodiodes (UTC-PDs) 3-dB bandwidth Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention Dipole Optics law Optoelectronics Equivalent circuit Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 26:1952-1955 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2014.2343260 |
| Popis: | InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs setback layer were employed at the InGaAs/InP absorption and collection interface to reduce the current blocking effect. A high photocurrent of 160 mA with 1.9 GHz 3-dB bandwidth from a 70-(mu ) m-diameter top-illuminated UTC-PD is achieved. A large 3-dB bandwidth of 62.5 GHz, extracted using an equivalent circuit model, has also been obtained from a 12-(mu ) m-diameter UTC-PD device. The results demonstrate that the dipole-doping can serve as an effective alternative to the quaternary InGaAsP layer at InGaAs/InP interface for InP-based UTC-PD to suppress the current blocking and reduce the complexity in epilayers growth and device fabrication. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version |
| Databáze: | OpenAIRE |
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