Large magnetoresistance in topological insulator candidate TaSe3
| Autor: | Chuanying Xi, Muhammad Naveed, Tongshuai Zhu, Xiaoxiang Xi, Haijun Bu, Yong Zhang, Fengqi Song, Zixiu Cai, Fucong Fei, Dongjing Lin, Bo Chen, Haijun Zhang, Hangkai Xie, Boyuan Wei |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Magnetoresistance Oscillation Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Physics and Astronomy 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Topological insulator Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Magnitude (astronomy) High field Density ratio 0210 nano-technology lcsh:Physics |
| Zdroj: | AIP Advances, Vol 10, Iss 9, Pp 095314-095314-8 (2020) |
| ISSN: | 2158-3226 |
| Popis: | Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3. |
| Databáze: | OpenAIRE |
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