Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET
| Autor: | M. Agethen, Ralf Reuter, S. van Waasen, W. Brockerhoff, D. Peters, Franz-Josef Tegude, U. Auer |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Radiation
Materials science business.industry Transistor Shot noise Heterojunction Condensed Matter Physics Noise (electronics) law.invention Gallium arsenide Impact ionization chemistry.chemical_compound chemistry law Hardware_INTEGRATEDCIRCUITS Equivalent circuit Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Elektrotechnik |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 45:977-983 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.588612 |
| Popis: | A new small-signal and noise-equivalent circuit for heterostructure field-effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET. Furthermore, based on these results, the bias-dependence of the newly implemented small-signal equivalent elements and the equivalent intrinsic noise sources, are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|