Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
| Autor: | Qingxiao Wang, Xiaoye Qin, Joerg Appenzeller, Christopher L. Hinkle, Robert M. Wallace, Ning Lu, Rafik Addou, Moon J. Kim, Angelica Azcatl, Abhijith Prakash, Kyeongjae Cho, Jiyoung Kim, Lanxia Cheng, Chenxi Zhang |
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| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
Materials science Inorganic chemistry FOS: Physical sciences chemistry.chemical_element Bioengineering 02 engineering and technology 010402 general chemistry 01 natural sciences Chalcogen X-ray photoelectron spectroscopy Transition metal Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Mechanical Engineering Doping technology industry and agriculture Materials Science (cond-mat.mtrl-sci) General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen Sulfur 0104 chemical sciences chemistry Covalent bond First principle 0210 nano-technology human activities |
| Zdroj: | Nano Letters. 16:5437-5443 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homojunctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, which is in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated. |
| Databáze: | OpenAIRE |
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