| Autor: |
Shoumian Chen, Shang Enming, Yu Ding, Wenqiao Chen, Hu Shaojian |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Journal of Microelectronic Manufacturing, Vol 2, Iss 4 (2019) |
| ISSN: |
2578-3769 |
| Popis: |
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin height lies between 50~60 nm. The threshold voltage shift by quantum confinement effect has a steep increase as fin width shrinks to 4 nm. Sharper fin cross section profile gives better subthreshold swing (SS) and stronger drive current because of better gate control. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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