Physically defined triple quantum dot systems in silicon on insulator
| Autor: | Tetsuo Kodera, Shunri Oda, Raisei Mizokuchi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Silicon on insulator 02 engineering and technology Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Etching (microfabrication) Quantum dot Qubit 0103 physical sciences Optoelectronics Dry etching 0210 nano-technology business Quantum tunnelling Electron-beam lithography |
| Zdroj: | Appl. Phys.. |
| Popis: | We report characterizations of two types of Si triple quantum dot (TQD) devices with charge sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are connected in line to adjacent QD(s), while all QDs are tunnel-coupled to each other in the other device to form a triangle. Both TQD systems are physically defined on silicon-on-insulator substrates using electron beam lithography and dry etching. From electron transport measurements of each type of TQD system at 4.2 K, we demonstrate the formation of tunnel-coupled TQD systems and the tunability of their electric potentials. |
| Databáze: | OpenAIRE |
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