IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current
| Autor: | Francesco Iannuzzo, Stig Munk-Nielsen, Laurent Dupont, Marco Liserre, Nick Baker |
|---|---|
| Přispěvatelé: | Aalborg University [Denmark] (AAU), Laboratoire des Technologies Nouvelles (IFSTTAR/COSYS/LTN), Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR), Christian-Albrechts-Universität zu Kiel (CAU), MEMPHIS ANR-13-PRGE-0005-01 PROGELEC project |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
LOGIC GATES TENSION Gate dielectric TEMPERATURE MEASUREMENT SEMICONDUCTOR DEVICE MEASUREMENT 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Temperature measurement TRANSISTOR BIPOLAIRE A GRILLE ISOLEE Gate oxide Semiconductor devices MESURE DE TEMPERATURE 0103 physical sciences CURRENT MEASUREMENT 0202 electrical engineering electronic engineering information engineering Gate driver Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering SEMICONDUCTEUR 010302 applied physics Gate turn-off thyristor VOLTAGE MEASUREMENT Hardware_MEMORYSTRUCTURES business.industry INSULATED GATE BIPOLAR TRANSISTORS 020208 electrical & electronic engineering Bipolar junction transistor [SPI.NRJ]Engineering Sciences [physics]/Electric power JUNCTIONS Current injection technique Power Insulated-gate bipolar-transistor (IGBT) Optoelectronics Junction temperature business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Power Electronics IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2017, 32 (4), pp.3099-3111. ⟨10.1109/TPEL.2016.2573761⟩ Baker, N, Dupont, L, Munk-Nielsen, S, Iannuzzo, F & Liserre, M 2017, ' IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current ', I E E E Transactions on Power Electronics, vol. 32, no. 4, pp. 3099-3111 . https://doi.org/10.1109/TPEL.2016.2573761 |
| ISSN: | 0885-8993 |
| DOI: | 10.1109/TPEL.2016.2573761⟩ |
| Popis: | Infrared measurements are used to assess the measurement accuracy of the peak gate current (I GPeak ) method for Insulated-gate bipolar transistor (IGBT)junction temperature measurement. Single IGBT chips with the gate pad in both the center and the edge are investigated, along with paralleled chips, as well as chips suffering partial bondwire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (V CE (low ) ). In all cases, the IG Peak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with nonnegligible temperature disequilibrium between chips, the I GPeak method delivers a measurement based on the average temperature of the gate pads. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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