Engineering the structural and electronic phases of MoTe2 through W substitution
| Autor: | Junzhang Ma, Pinshane Y. Huang, T. Qian, Wenkai Zheng, Xiao Tong, Daniel Chenet, Luis Balicas, Madan Dubey, Shancai Wang, Abhay Pasupathy, Aaron M. Lindenberg, Rui Lou, Abhinandan Antony, Friederike Ernst, Daniel W. Paley, Yi Lin, Marshall H. Chin, Jerry I. Dadap, Blanka Janicek, Qian Zhang, Daniel Rhodes, T. Klarr, Yu-Che Chiu, Clara Nyby, James Hone, Drew Edelberg, Richard M. Osgood, Wencan Jin, Hong Ding, Theanne Schiros, Mannebach Ehren, Alexander L. Mazzoni, Nathan Finney |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Band gap Mechanical Engineering Substitution (logic) Doping FOS: Physical sciences Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Transition metal Homogeneous space Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Orthorhombic crystal system 0210 nano-technology Ohmic contact Monoclinic crystal system |
| Popis: | MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$. 10 paged, 5 pages, supplementary information not included |
| Databáze: | OpenAIRE |
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