Measuring the implantation depth of silver clusters in graphite

Autor:	Richard E. Palmer, C F Sanz-Navarro, M. Couillard, S.C. Weller, D. J. Kenny, Roger Smith
Rok vydání:	2001
Předmět:	Thermal oxidation Materials science Nanotechnology Molecular physics Atomic and Molecular Physics and Optics law.invention Ion implantation Etching (microfabrication) law Cluster (physics) Graphite Scanning tunneling microscope Penetration depth Deposition (law)
Zdroj:	Scopus-Elsevier
ISSN:	1434-6060
DOI:	10.1007/s100530170073
Popis:	Scanning tunnelling microscopy (STM) and molecular dynamics (MD) simulations have been used to investigate the implantation of Ag7 - clusters into the graphite surface. An experimental measure of the implantation depth of individual clusters is gained via thermal oxidation of the bombarded graphite surfaces. This process results in etching of the cluster-induced defects to form etch pits which grow laterally whilst retaining the depth of the implanted cluster. STM imaging of the etch pits reveals the distribution of implantation depths for deposition energies of 2 keV and 5 keV. Molecular dynamics simulations for clusters of 5 keV energy show that the implantation depth for Ag7 - is largely independent of the impact site on the graphite surface and the cluster orientation. The implantation depth found by MD lies at the upper edge of the experimental depth distribution.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9e1a6a10d83c2e134a00d15e30a383d https://doi.org/10.1007/s100530170073 Zobrazit plný text záznamu Full text from SpringerLink