Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

Autor:	P. Romanini, Marco Peroni, Ennio Giovine, D. Dominijanni, Vittorio Foglietti, Andrea Notargiacomo, R. Casini, Michele Ortolani, Claudio Lanzieri
Rok vydání:	2010
Předmět:	EBL Materials science business.industry GaAs Transistor Schottky diode Heterojunction Gallium arsenide law.invention chemistry.chemical_compound Resist chemistry law Area reduction Heterostructures Optoelectronics Schottky contacts business Lithography Electron-beam lithography Diode
Zdroj:	35th International Conference on Infrared, Millimeter and Terahertz Waves, 05-10/09/2013 info:cnr-pdr/source/autori:Dominijanni, D.; Casini, R.; Foglietti, V.; Ortolani, M.; Notargiacomo, A.; Lanzieri, C.; Peroni, M.; Romanini, P.; Giovine, E./congresso_nome:35th International Conference on Infrared, Millimeter and Terahertz Waves/congresso_luogo:/congresso_data:05-10%2F09%2F2013/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
DOI:	10.1109/icimw.2010.5612783
Popis:	Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9d884e66f2ca5730c014b4a1ac67d7f https://doi.org/10.1109/icimw.2010.5612783 Zobrazit plný text záznamu