| Popis: |
By measuring the photoconductive edge and the magnetophonon effect in InP and GaAs as their band gap is increased by the application of hydrostatic pressure, it has been possible to obtain a direct experimental relationship between the electron effective mass, m*, and the direct band gap, E0. Comparison with the k.p theory showed that in InP, Ep=16.7+or-0.2, Ep'=0 and C=0 while in GaAs Ep=25.0+or-0.5, Ep'=5+or-1 and C=0 where Ep, Ep' and C are measures of the k.p interaction of the conduction band with, respectively, the valence band, with the next ( Gamma 5c) conduction band and with the conduction bands lying even higher. |
