Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy
| Autor: | Lisa Michez, Vasile Heresanu, Mathieu Stoffel, Charles-Emmanuel Dutoit, Voicu Dolocan, Sylvain Bertaina, Matthieu Petit, Vinh Le Thanh |
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| Přispěvatelé: | Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Analytical chemistry Molecular Beam Epitaxy (MBE) Mn5Ge3 Epitaxy Chemical beam epitaxy Condensed Matter::Materials Science Condensed Matter::Superconductivity Materials Chemistry Atomic layer epitaxy Low temperature Epitaxial growth Ferromagnetic resonance (FMR) Metalorganic vapour phase epitaxy Thin film business.industry Metals and Alloys Surfaces and Interfaces Ferromagnetic resonance Reactive deposition epitaxy (RDE) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electron diffraction [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Condensed Matter::Strongly Correlated Electrons business Molecular beam epitaxy |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2015, 589, pp.427-432. ⟨10.1016/j.tsf.2015.05.068⟩ Thin Solid Films, 2015, 589, pp.427-432. ⟨10.1016/j.tsf.2015.05.068⟩ |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2015.05.068 |
| Popis: | International audience; C-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn5Ge3 /Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn5Ge3 and C-doped Mn5Ge3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin films quality. |
| Databáze: | OpenAIRE |
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