Investigating 3D NAND Flash Read Disturb Reliability With Extreme Value Analysis
| Autor: | Cristian Zambelli, Piero Olivo, Luca Crippa, Rino Micheloni |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
reliability
Computer science 3D-TLC NAND flash points over threshold read disturb NAND gate Statistical model Chip Die (integrated circuit) NO Electronic Optical and Magnetic Materials Reliability engineering Flash (photography) PE7_2 PE7_5 Electrical and Electronic Engineering Safety Risk Reliability and Quality Extreme value theory Reliability (statistics) Parametric statistics |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 21:486-493 |
| ISSN: | 1558-2574 1530-4388 |
| Popis: | The storage systems relying on the 3D NAND Flash technology require an extensive modeling of their reliability in different working corners. This enables the deployment of system-level management routines that do not compromise the overall performance and reliability of the system itself. Dedicated parametric statistical models have been developed so far to capture the evolution of the memory reliability, although limiting the description to an average behavior rather than extreme cases that can disrupt the storage functionality. In this work, we validate the application of an extreme statistics tool, namely the Points-Over-Threshold method, to characterize the read disturb reliability of a 3D NAND Flash chip. Such technique proved that the die reliability characterized through extreme events analysis can be predicted using a low number of samples and generally holds good prediction features for distribution tail events. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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