Revealing the hopping mechanism of conduction in heavily doped silicon diodes
| Autor: | M.M. Shwarts, V. L. Borblik, V. Lashkaryov |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon Condensed matter physics Liquid helium business.industry Doping chemistry.chemical_element Conductivity Thermal conduction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Variable-range hopping Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor chemistry law Condensed Matter::Superconductivity Electronic engineering Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering business Diode |
| Popis: | Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hopping conductivity. The interpretation of these results considers a p-n junction from a nontraditional point of view, namely, as heavily doped and highly compensated semiconductor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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