Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array
| Autor: | Qiming Li, George T. Wang, James R. Riley, Ping Lu, Jonathan J. Wierer, Daniel D. Koleske, Lincoln J. Lauhon, Sonal Padalkar |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Light Nanowire Bioengineering Cathodoluminescence Gallium Indium law.invention Optics law Scanning transmission electron microscopy Nanotechnology General Materials Science Quantum well Diode business.industry Nanowires Mechanical Engineering General Chemistry Condensed Matter Physics Solid-state lighting Semiconductor Semiconductors Optoelectronics business Light-emitting diode |
| Zdroj: | Nano letters. 13(9) |
| ISSN: | 1530-6992 |
| Popis: | Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition. |
| Databáze: | OpenAIRE |
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