Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53 μm
| Autor: | Eajm Erwin Bente, YS Yok-Siang Oei, Martijn J. R. Heck, MK Meint Smit, Yohan Barbarin, R Richard Nötzel |
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| Přispěvatelé: | Eindhoven University of Technology [Eindhoven] (TU/e), Photonic Integration, Photonics and Semiconductor Nanophysics |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Optical amplifier
Materials science business.industry Amplifier Ring laser Saturable absorption 02 engineering and technology Laser 01 natural sciences Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention 010309 optics 020210 optoelectronics & photonics Optics law Fiber laser 0103 physical sciences Phase noise 0202 electrical engineering electronic engineering information engineering [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics business |
| Zdroj: | Optics Express Optics Express, Optical Society of America-OSA Publishing, 2006, 14 (21), pp.9716. ⟨10.1364/OE.14.009716⟩ Optics Express, 14(21), 9716-9727. Optical Society of America (OSA) |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/OE.14.009716⟩ |
| Popis: | International audience; We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz – 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications. |
| Databáze: | OpenAIRE |
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