Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
| Autor: | A. Chettaoui, Guillaume Saint-Girons, Jose Penuelas, J. Cheng, Benoit Gobaut, G. Hollinger, Yves Robach, A. Benarmouche |
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| Přispěvatelé: | INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Diffraction
Materials science Reflection high-energy electron diffraction business.industry Nucleation 02 engineering and technology Surfaces and Interfaces Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Crystallography Semiconductor Electron diffraction 0103 physical sciences Materials Chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 010306 general physics 0210 nano-technology business ComputingMilieux_MISCELLANEOUS Molecular beam epitaxy Electron backscatter diffraction |
| Zdroj: | Surface Science Surface Science, Elsevier, 2011, 605 (9-10), pp.912-916. ⟨10.1016/j.susc.2011.02.003⟩ |
| ISSN: | 0039-6028 |
| Popis: | The structural properties of InP islands grown by molecular beam epitaxy on SrTiO 3 substrates are studied. The evolution of the semiconducting islands size and density with growth temperature is described. The structural results reveal an original behavior: the islands orientation with respect to the substrate can be tuned with growth temperature. Moreover; X-ray diffraction results show that the islands are fully relaxed, which is in accordance with the specificities of the semiconductor/oxide interface. The structural transition is observed by atomic force microscopy, X-ray diffraction and electron diffraction. |
| Databáze: | OpenAIRE |
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