Scaling Aspects of Nanowire Schottky Junction based Reconfigurable Field Effect Transistors
| Autor: | Tim Baldauf, Thomas Mikolajick, Walter M. Weber, Andre Heinzig |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Skalierung Abschirmlänge Nanodraht Schottky-Übergang SBFET rekonfigurierbare Logik Materials science Silicon business.industry ddc:621.3 Schottky barrier scaling screening length nanowire Schottky junction SBFET reconfigurable logic Nanowire chemistry.chemical_element Schottky diode Germanium 01 natural sciences chemistry 0103 physical sciences Optoelectronics Field-effect transistor 010306 general physics business Scaling Quantum tunnelling |
| Popis: | This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which are essential parts of reconfigurable field effect transistors (RFETs). The applicability of the screening (or natural) length theory in relation to the carrier transport is discussed first. Various geometrical parameters of the device were investigated to find the optimal structure in terms of performance. For this purpose, electrostatic properties and the dynamic behavior of the RFET were studied. Finally the increase in performance due to an additional substitution of the silicon by germanium is analyzed. |
| Databáze: | OpenAIRE |
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