Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region
| Autor: | Jem Jos Haverkort, JH Joachim Wolter, Qian Gong, EW Erik Bogaart, R Richard Nötzel |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics |
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Chemistry business.industry Relaxation (NMR) Physics::Optics Infrared spectroscopy Carrier lifetime Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Wavelength Quantum dot Optoelectronics Ground state business Ultrashort pulse Excitation |
| Zdroj: | Applied Physics Letters, 86(17):173109, 173109-1/3. American Institute of Physics |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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