Nanowire Transistors with Bound-Charge Engineering
| Autor: | Lei Liu, Mohammed Harb, Raphael J. Prentki, Hong Guo |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Orders of magnitude (temperature) Transistor Nanowire General Physics and Astronomy Charge (physics) Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences law.invention law Subthreshold swing 0103 physical sciences Scalability Hardware_INTEGRATEDCIRCUITS Optoelectronics Nanowire transistors 010306 general physics business Electronic systems Hardware_LOGICDESIGN |
| Zdroj: | Physical Review Letters. 125 |
| ISSN: | 1079-7114 0031-9007 |
| Popis: | Low-dimensional electronic systems such as silicon nanowires exhibit weak screening which is detrimental to the performance and scalability of nanodevices, e.g., tunnel field-effect transistors. By atomistic quantum transport simulations, we show how bound charges can be engineered at interfaces of Si and low-κ oxides to strengthen screening. To avoid compromising gate control, low-κ and high-κ oxides are used in conjunction. In Si nanowire tunnel field-effect transistors, we demonstrate that bound charge engineering increases the on-state current by orders of magnitude, and the combination of oxides yields minimal subthreshold swing. We conclude that the proposed bound-charge engineering paves a way toward improved low-power transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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