Radiation damage of silicon strip detectors in the NA50 experiment

Autor:	Mario Sitta, M. Martinetto, G. Bonazzola, Paolo Giubellino, A. Marzari-Chiesa, Wladyslaw Dabrowski, M. Masera, P.R. Mendes, F. Prino, Marek Idzik, L. Riccati, Bruno Alessandro, E. Crescio, Luciano Ramello, Pawel Grybos, S. Beole
Rok vydání:	1998
Předmět:	Physics Nuclear and High Energy Physics Silicon business.industry Detector chemistry.chemical_element Radiation Particle detector Ionizing radiation Optics chemistry Gaseous ionization detectors Radiation damage Irradiation business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 419:556-569
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(98)00868-7
Popis:	During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 10 14 eq n/cm 2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d79b0b0ed3a84725da28a34417b31747 https://doi.org/10.1016/s0168-9002(98)00868-7 Zobrazit plný text záznamu Full Text from ScienceDirect