Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth
| Autor: | Donatas Dargis, Didier Chaussende, Eirini Sarigiannidou, Kęstutis Jarašiūnas, Gediminas Liaugaudas, Nikolaos Tsavdaris |
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| Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Diffusion Kinetics Analytical chemistry Crystal growth 02 engineering and technology Carrier lifetime [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystal Stages of growth Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology Layer (electronics) ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Materials Science Forum Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.253-256 |
| ISSN: | 0255-5476 1662-9760 |
| Popis: | The electronic quality of a Physical Vapour Transport (PVT) grown 15R-SiC crystal at different stages of growth was assessed by time-resolved optical pump-probe techniques. The measured differential transmittivity (DT) kinetics for the layers corresponding to the initial, middle and final stages of growth revealed clear differences in the decay of the DT signal, indicating a decreasing concentration of traps at the later stages of the crystal growth. The estimated trap concentration in the initial layer wasNT≈ 1019cm-3, while it decreased down to less than 2×1018cm-3in the top layer. The injection dependence of the diffusion coefficient at room temperature confirmed the gradual decrease ofNTin the layers corresponding to later stages of growth. Accordingly, the bipolar diffusion coefficient in the middle and the top layer wasDa≈ 2 cm2/s, whileDa= 0.9 cm2/s was measured in the layer closest to the seed. |
| Databáze: | OpenAIRE |
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