Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnOx heterojunctions
| Autor: | João Monteiro Silva, Corneliu Ghica, Koppole C. Sekhar, K. Gwozdz, E. M. F. Vieira, Luís Gonçalves, M. C. Istrate, Katerina Veltruska, Vladimír Matolín, Adil Chahboun, Mário Pereira, F. Figueiras, Andrei L. Kholkin, José Silva |
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| Přispěvatelé: | Universidade do Minho |
| Rok vydání: | 2020 |
| Předmět: |
Photocurrent
Science & Technology Materials science Equivalent series resistance Renewable Energy Sustainability and the Environment business.industry Energy conversion efficiency Heterojunction 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Ferroelectricity Band offset 0104 chemical sciences Optoelectronics General Materials Science Electric potential 0210 nano-technology business Perovskite (structure) |
| Zdroj: | Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP |
| ISSN: | 2050-7496 2050-7488 |
| Popis: | The photovoltaic (PV) response of SnOx/Si heterojunctions (HJs) through the change of the SnO and SnO2 ratio in the samples that allows us to obtain p- or n-type SnOx films is investigated in this work. The values of short-circuit photocurrent density (Jsc), open-circuit voltage (VOC), fill factor (FF) and power conversion efficiency (PCE) are found to be 12.6 mA cm−2, 0.23 V, 27% and 8.3%, for the p-SnOx/n-Si HJ and 10.3 mA cm−2, 0.20 V, 20% and 4.5% for the n-SnOx/p-Si HJ. The enhanced PV effect observed in the p-SnOx/n-Si HJs can be attributed to a small band offset between SnOx and Si, which lowers the diffusion length that can contribute to higher recombination rate and smaller series resistance. Furthermore, the values of Jsc, VOC, FF and PCE were enhanced up to 30.9 mA cm−2, −2.0 V, 19% and 10.9%, respectively, through the insertion of a 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT) ferroelectric layer between n-Si and p-SnOx. The built-in field developed at the Si/BCZT/SiOx/SnOx interfaces together with the depolarizing field, provides a favorable electric potential for the separation and further transport of photo generated electron–hole (e–h) pairs. This work provides a viable approach by combining ferroelectrics with p-SnOx/n-Si HJs for building efficient ferroelectric-based solar cells. This work was supported by: (i) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contracts UIDB/04650/2020 and the Scientific and Technological Cooperation Program between Portugal (FCT) and Morocco (CNRST) - 2019/2020; (ii) the reference project UID/EEA/04436/2013, by FEDER funds through the COMPETE 2020 – Programa Operacional Competitividade e Internacionalização (POCI) with the reference project POCI-01-0145- FEDER-006941; (iii) CMEMS-UMinho Strategic Project UIDB/ 04436/2020 and UIDP/04436/2020; (iv) the Programa Operacional Regional do Norte (NORTE2020), through Fundo Europeu de Desenvolvimento Regional (FEDER), Project NORTE-01-0145-FEDER-000032, NextSea; (v) DST-SERB, Govt. of India through Grant No. ECR/2017/00006; (vi) the statutory grant (No. 8201003902) of Department of Quantum Technologies of Wroclaw University of Science and Technology an (vii) the project CICECO-Aveiro Institute of Materials, UIDB/50011/ 2020 & UIDP/50011/2020, financed by national funds through the FCT/MEC and when appropriate co-financed by FEDER under the PT2020 Partnership Agreement. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and financial support under proposal 20192056. |
| Databáze: | OpenAIRE |
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