Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
| Autor: | Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Maria Ruzzarin, Matteo Meneghini, Andrea Favaron, Enrico Zanoni, Vanessa Rizzato, Gaudenzio Meneghesso, Denis Marcon, Isabella Rossetto, Stefaan Decoutere, Steve Stoffels |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
02 engineering and technology Activation energy Radiation 01 natural sciences law.invention law 0103 physical sciences Microscopy Spectral analysis Electrical and Electronic Engineering Safety Risk Reliability and Quality Shape factor Weibull distribution 010302 applied physics business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics 0210 nano-technology business Luminescence |
| Popis: | This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By means of combined DC and spectral analysis we demonstrate the following results: (i) the devices demonstrate a time-dependent failure mechanism; (ii) time to failure (TTF) can be described by a Weibull distribution with a shape factor higher than 1, suggesting a wear-out failure; (iii) the devices have an estimated 20-years lifetime for a gate voltage of 7.2 V; (iv) TTF is temperature-dependent, with an activation energy of 0.5 eV; (v) emission microscopy reveals the presence of hot spots, whose emission originates from yellow luminescence and/or hot electron radiation. |
| Databáze: | OpenAIRE |
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