Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition
| Autor: | Kang Fs, Yeun-Ho Joung, Lee J, Song Bs, Kang H, Lee S, Choi Yk, Hong B, Choi Ws |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Material properties of diamond Ion plating Biomedical Engineering Analytical chemistry Diamond Bioengineering General Chemistry Chemical vapor deposition Combustion chemical vapor deposition engineering.material Condensed Matter Physics Carbon film Plasma-enhanced chemical vapor deposition engineering General Materials Science Thin film |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 16:5295-5297 |
| ISSN: | 1533-4899 1533-4880 |
| Popis: | In this study, diamond films were prepared using the microwave plasma-enhanced chemical vapor deposition (PECVD) system, which included a DC bias system to enhance the nucleation of the films. The films were synthesized on Si wafers with different ratios of methane (CH4) and hydrogen (H2) gases. We have studied the effects of the CH4-to-H2 ratio on the structural and optical properties of diamond films. The thickness and surface profile of the films were characterized via field emission scanning electron microscopy (FE-SEM). Raman was used to investigate the structural properties of the diamond films. The refractive indexes as functions of the CH4-to-H2 ratio were measured using an ellipsometer. The FE-SEM analysis showed that the 3 and 5 sccm CH4 created diamond films. The Raman analysis indicated that a nanocrystalline diamond film was formed at 3 sccm; a general diamond film, at 5 sccm; and films similar to the a-C:H film, at 7 sccm. The ellipsometer measurement showed that the refractive index of the synthesized diamond film was around 2.42 at 3 sccm. This value decreased as the CH4 volume increased. |
| Databáze: | OpenAIRE |
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