Coupling of Erbium-Implanted Silicon to a Superconducting Resonator
| Autor: | J. David Carey, Nafsika Theodoropoulou, Tobias Lindström, Matias Urdampilleta, Ben Murdin, Naitik A. Panjwani, Mark A. Hughes, I. S. Wisby, Kevin P. Homewood |
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| Přispěvatelé: | University of Salford, University College of London [London] (UCL), Circuits électroniques quantiques Alpes (QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), National Physical Laboratory [Teddington] (NPL), University of Surrey (UNIS) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Superconductivity
Materials science Silicon business.industry Annealing (metallurgy) General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion law.invention Erbium Resonator chemistry law 0103 physical sciences Optoelectronics Photonics 010306 general physics 0210 nano-technology business Electron paramagnetic resonance ComputingMilieux_MISCELLANEOUS [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] |
| Zdroj: | Physical Review Applied Physical Review Applied, American Physical Society, 2021, 16 (3), pp.034006. ⟨10.1103/PhysRevApplied.16.034006⟩ |
| ISSN: | 2331-7019 |
| DOI: | 10.1103/PhysRevApplied.16.034006⟩ |
| Popis: | Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different \ud Er\ud centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When \ud Si\ud is coimplanted with \ud 10\ud 17\ud cm\ud −\ud 3\ud \ud Er\ud and \ud 10\ud 20\ud cm\ud −\ud 3\ud \ud O\ud ions, and the appropriate annealing process is used, one of these centers, which is present at higher \ud Er\ud concentrations, can be eliminated. Characterization of samples with \ud Er\ud concentrations of |
| Databáze: | OpenAIRE |
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