First stages of Pd/Ge reaction: Mixing effects and dominant diffusing species
| Autor: | J. Perrin Toinin, Michael Texier, K. Hoummada, Alain Portavoce, M. Bertoglio |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
02 engineering and technology Atom probe 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Electrical and Electronic Engineering Thin film [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS Deposition (law) 010302 applied physics 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Germanide Crystallography chemistry Transmission electron microscopy [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Crystallite 0210 nano-technology Layer (electronics) Order of magnitude |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩ Microelectronic Engineering, Elsevier, 2017, 167, pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩ Microelectronic Engineering, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩ |
| ISSN: | 0167-9317 1873-5568 |
| Popis: | International audience; The structure and the chemical composition of Pd germanides formed on Ge(100) were investigated using transmission electron microscopy (TEM), in-situ X-ray diffraction (XRD), and atom probe tomography (APT). An ultra thin Si film used as a marker was deposited on Ge(100) prior to Pd film deposition in order to identify the diffusing species during the Pd2Ge growth. The observations evidenced the formation of a thin interfacial poly-crystalline Pd2Ge layer during Pd room-temperature deposition on Ge(100). In-situ XRD thermal treatments ranging from 50 to 400 degrees C revealed that the Si marker had no influence on the sequential formation of Pd2Ge and PdGe. Ex situ APT and TEM characterizations showed that the Si marker layer was located closer to the Pd2Ge/Ge interface than to the Pd2Ge surface, after reaction. This result indicates that Ge and Pd self-diffusion are in the same order of magnitude during Pd2Ge growth. (C) 2016 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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