STM investigation of the initial adsorption stage of Bi on Si(1 0 0)-(2×1) and Ge(1 0 0)-(2×1) surfaces
| Autor: | P.V. Melnik, I.F. Koval, N.G. Nakhodkin, S.Yu. Bulavenko, Henricus J.W. Zandvliet |
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| Přispěvatelé: | Physics of Interfaces and Nanomaterials, Faculty of Science and Technology |
| Rok vydání: | 2001 |
| Předmět: |
Surface diffusion
Silicon Dimer chemistry.chemical_element Germanium Surfaces and Interfaces Activation energy Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films law.invention Crystallography chemistry.chemical_compound chemistry law Materials Chemistry Perpendicular Scanning tunneling microscope METIS-202308 IR-73082 |
| Zdroj: | Surface science, 482-485(1), 370-375. Elsevier |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(01)00804-4 |
| Popis: | Scanning tunneling microscopy has been used to investigate the initial adsorption stage of Bi on Si(1 0 0) and Ge(1 0 0) surfaces at room temperature. The most favorable position for a Bi ad-dimer on both surfaces is the B-configuration (Bi ad-dimer positioned on-top of the substrate rows with its dimer bond aligned along the substrate dimer row direction). For Si(1 0 0) the A-type dimers (dimer bond aligned perpendicular to the substrate dimer row direction) occasionally rotate back and forth to a B-configuration. The diffusion rates of B-type and A-type dimers along the substrate row and the B–A, A–B rotations on Si(1 0 0) are extracted from an analysis of many sequences of STM images. Finally, it is shown that the presence of an attractive interaction between Bi ad-dimers (irrespective of their orientation) positioned on neighboring substrate dimer rows leads to the formation of local regions with a 2×2 reconstruction. |
| Databáze: | OpenAIRE |
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