Optical study of p-doping in GaAs nanowires for low-threshold and high-yield lasing
| Autor: | Chennupati Jagadish, Alex S. Walton, Stefan Skalsky, Tim Burgess, Patrick Parkinson, Peter Mitchell, Sudha Mokkapati, Juan Arturo Alanis, Dhruv Saxena, Mykhaylo Lysevych, Xiaoyan Tang, Hark Hoe Tan |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
PL
Materials science ResearchInstitutes_Networks_Beacons/photon_science_institute Nanowire Physics::Optics Bioengineering 02 engineering and technology Photon Science Institute Condensed Matter::Materials Science Doping General Materials Science Spontaneous emission III-V Nanowire lasers business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Semiconductor Yield (chemistry) Optoelectronics Quantum efficiency 0210 nano-technology business Lasing threshold Recombination |
| Zdroj: | Alanis Azuara, J A, Lysevych, M, Burgess, T, Saxena, D, Mokkapati, S, Skalsky, S, Tang, X, Mitchell, P, Walton, A, Tan, H H, Jagadish, C & Parkinson, P 2018, ' Optical study of p-doping in GaAs nanowires for low-threshold and high-yield lasing ', Nano Letters, vol. 19, no. 1, pp. 362-368 . https://doi.org/10.1021/acs.nanolett.8b04048 |
| ISSN: | 1530-6984 |
| Popis: | Semiconductor nanowires suffer from significant non-radiative surface recombination, however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and hence quantum efficiency of emission, allowing demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps−1 by modelling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p &3 × 1018 cm−3 and lengths & 4 µm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼ 10 µJ cm−2 , and using a data-led filtering step, we present a method to simply identify sub-sets of nanowires with over 90% lasing yield. |
| Databáze: | OpenAIRE |
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