Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors
| Autor: | Garam Kim, Sangwan Kim, Hyun Woo Kim, Tae Chan Kim, Jang Hyun Kim |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Current (mathematics)
02 engineering and technology 01 natural sciences regression analysis law.invention work-function variation (WFV) tunnel field-effect transistor (TFET) law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Work function Electrical and Electronic Engineering Quantum tunnelling 010302 applied physics Physics Condensed matter physics Subthreshold conduction Transistor 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Threshold voltage Band-to-band tunneling Logic gate lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology lcsh:TK1-9971 Biotechnology Voltage |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 8, Pp 1345-1349 (2020) |
| ISSN: | 2168-6734 |
| Popis: | In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage ( ${V} _{\mathrm{ ON}}$ ) and threshold voltage ( $V_{T}$ ) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of $V_{T}$ and ${V} _{\mathrm{ ON}}$ are quantitatively analyzed by coefficient of determination ( ${R} ^{2}$ ) in the regression analysis. The ${R} ^{2}$ values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias. |
| Databáze: | OpenAIRE |
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