Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
| Autor: | Jie Bai, Xiang Yu, Tao Wang, Chenqi Zhu, Xuanming Zhao, L. Jiu, Shuoheng Shen, Yuefei Cai |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Silicon chemistry.chemical_element 02 engineering and technology Epitaxy 01 natural sciences law.invention law Etching (microfabrication) 0103 physical sciences Materials Chemistry Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Isotropic etching Electronic Optical and Magnetic Materials chemistry Optoelectronics Photolithography 0210 nano-technology business Layer (electronics) |
| ISSN: | 0268-1242 |
| Popis: | A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A (113) Si substrate is patterned into groove trenches by means of using a standard photolithography technique and then anisotropic chemical etching, forming (111) facets with an inclination angle of 58˚ with respect to c-axis in addition to the un-etched (113) facets. A thick AlN layer is subsequently epitaxially grown on the patterned silicon to cover all the facets ensuring to eliminate the melt-back, followed by selectively depositing SiO2 masks on the (113) facets only. Further GaN overgrowth is performed only on the exposed (111) facets, forming (11–22) semi-polar GaN with high crystal quality along the vertical direction. Stimulated emission at room temperature has been observed with a low threshold. Low-temperature photoluminescence measurements confirm a significant reduction in basal stacking faults density. This method provides a promising approach to effectively suppress the Ga melt-back etching issue, which is particularly important for Al(Ga)N growth on semi-polar GaN that requires a high growth temperature. The presented results are crucially important for developing monolithic on-chip integration of electronics and photonics on silicon. |
| Databáze: | OpenAIRE |
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