Electrical and Optical characteristics of ZnO:Al Thin Films

Autor:	S. N. Chu, I. H. Son, S. K. Shin, M. J. Keum, K. H. Kim, J. S. Yang, M. K. Choi, H. W. Choi, W. S. Lee
Rok vydání:	2002
Předmět:	Materials science business.industry Wide-bandgap semiconductor Substrate (electronics) Semiconductor Electrical resistivity and conductivity Sputtering visual_art visual_art.visual_art_medium Optoelectronics Chemical stability Ceramic Thin film business
Zdroj:	Scopus-Elsevier
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-730-v5.12
Popis:	ZnO with hexagonal wurzite structure is a wide band gap n-type semiconductor. ZnO films can be prepared to obtain high transparency in the visible range, low resistivity, chemical stability and stability in hydrogen plasma including many foreign materials such as Al, In. In this work, we prepared ZnO:Al thin film by Facing Targets Sputtering system with Zn metal target and ZnO:Al(Al2O3 2wt%, 4wt%) ceramic target at total working gas pressure 1mTorr, substrate temperature R.T.. We evaluated the crystallographic, electrical and optical characteristics of the ZnO:Al films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d585c36c9bef771d9cb96f22ee9fe5b7 https://doi.org/10.1557/proc-730-v5.12 Zobrazit plný text záznamu Full text from SpringerLink