Carbon nanotube field-effect transistor for GHz operation
| Autor: | Jean-Philippe Bourgoin, J. Borghetti, Gilles Dambrine, J.M. Bethoux, M. Goffman, Henri Happy, Vincent Derycke |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire d'Electronique Moléculaire (LEM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Carbon nanotubes Nanotechnology 02 engineering and technology Carbon nanotube Aluminum oxide Coplanar transmission lines 7. Clean energy 01 natural sciences law.invention CNTFETs [SPI]Engineering Sciences [physics] Potential applications of carbon nanotubes law 0103 physical sciences Oxidation 010302 applied physics Transistor Impedance Frequency Self-assembly 021001 nanoscience & nanotechnology Carbon nanotube field-effect transistor Carbon nanotube quantum dot Microwave field effect transistors Gold Current (fluid) 0210 nano-technology Hafnium |
| Zdroj: | Proceedings of the 36th European Solid-State Device Research Conference, ESSDERC 2006 European Solid-State Device Research Conference European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.206-209, ⟨10.1109/ESSDER.2006.307674⟩ Scopus-Elsevier |
| Popis: | International audience; The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first time |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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