Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au
| Autor: | Jairo Sinova, Mathias Kläui, S. Yu. Bodnar, Y. Skourski, Olena Gomonay, Martin Jourdan |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Magnetoresistance
530 Physics General Physics and Astronomy FOS: Physical sciences 02 engineering and technology Epitaxy 01 natural sciences Magnetization Condensed Matter::Materials Science 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Antiferromagnetism Thin film 010306 general physics Physics Condensed Matter - Materials Science Annihilation Spintronics Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Materials Science (cond-mat.mtrl-sci) 530 Physik 021001 nanoscience & nanotechnology Magnetic field Condensed Matter::Strongly Correlated Electrons 0210 nano-technology |
| Popis: | In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was measured. In the case of a forced alignment of the staggered magnetization parallel to the hard [100]-direction, evidence for a larger anisotropic magnetoresistance effect was found. Furthermore, transient resistance reductions of about 1 % were observed, which we associate with the annihilation of antiferromagnetic domain walls by the magnetic field pulses. Comment: 6 pages, 4 figures |
| Databáze: | OpenAIRE |
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