Photoluminescence and electroluminescence properties of GaN-based LED chips with defective regions at low excitation levels
| Autor: | Hoon Jeong, Sung Bok Kang, Seungtaek Kim, Hyundon Jung, HyungTae Kim, Jongseok Kim |
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| Rok vydání: | 2017 |
| Předmět: |
Photoluminescence
Materials science business.industry High density 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology 01 natural sciences law.invention 010309 optics law 0103 physical sciences Optoelectronics 0210 nano-technology business Recombination Excitation Quantum well Light-emitting diode |
| Zdroj: | Scopus-Elsevier |
| DOI: | 10.1109/cleopr.2017.8118955 |
| Popis: | Defective regions of LED epi-wafers and chip-wafers could be observed by a photoluminescence (PL) imaging method. As the defective regions contain high density nonradiative recombination centers, the LED chips with defective regions showed different optical properties from those of LEDs with no defective regions found by PL imaging. At low optical excitation power levels, the PL properties were influenced by nonradiative recombination dominantly. Similar phenomena were observed from electroluminescence (EL) properties at low electrical excitation levels. Research results on the similarity and difference between PL and EL properties of LED chips are presented. |
| Databáze: | OpenAIRE |
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